University of California, Santa Barbara
Santa Barbara, CA 93106
American Association for the Advancement of Science, American Physical Society, Institute of Electrical and Electronics Engineers
IEEE Kiyo Tomiyasu Award; Friedrich Wilhelm Bessel Research Award, Humboldt Foundation; JSPS Invitation Fellowship (Short-term), Japan Society for the Promotion of Science; Thesis Advisor of Winifred and Louis Lancaster Dissertation Award Winner for Mathematics, Physical Sciences & Engineering (2016)
Kaustav Banerjee is one of the world’s leading innovators in the field of nanoelectronics. His current research focuses on the physics, technology, and applications of two-dimensional (2D) materials, such as graphene, and their heterostructures for designing next-generation energy-efficient electronics, photonics, and bioelectronics. He has received major international recognitions for his pioneering contributions to 3D ICs that are being widely commercialized by numerous semiconductor companies. His radical innovations with 2D materials are foundational for a new generation of ultra-energy-efficient electronics needed to support the “Internet of Things”. This includes demonstration of the first 2D-material channel tunneling transistor that switches at only 100 millivolts and reduces power dissipation by over 90% (Nature 2015), as well as a novel energy-efficient interconnect technology based on graphene that also overcomes fundamental limitations of conventional materials (Nano Letters 2016).
Visiting Professor, Tokyo Institute of Technology; Visiting Professor, Universität der Bundeswehr Muenchen; Guest Professor, Shanghai Jiao Tong University; Visiting Professor, Nanyang Technological University
PhD Electrical Engineering and Computer Sciences, University of California, Berkeley