Welcome to the Mukherjee group in the Materials Department at UCSB!

We are synthesizing narrow band gap semiconductors and topological insulators that emit and detect light in the infrared. This would enable better materials for environmental monitoring, quantum computing, manufacturing, and defense. Here, we are working with thin films of the IV-VI (such as PbSnSe) and the III-V (such as InAs/GaSb) material systems. We are pushing to directly integrate these thin films on to functional substrates like silicon and GaAs for hybrid circuits.

More recently, we have been interested in the materials science and engineering aspects of new quantum technologies. Read about our new collaboration on 'Quantum Interfaces' between adsorbate atoms and diamond nitrogen-vacancy centers here.

The group has a dedicated IV-VI molecular beam epitaxy (MBE) tool and uses III-V MBE chambers in the UCSB MBE Lab and metal-organic CVD tools through our collaborators. In addition, we work with specialized electron microscopy tools for in-situ and in-operando study of crystal defects, infrared optical spectroscopy, and are developing device test chambers for these very unique thin films. The group benefits from state-of-the-art materials characterization and fabrication instrumentation at UCSB.


   



© 2018 Kunal Mukherjee | Based on design by Andreas Viklund


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