David Vandervoet was part of the first class ever to go through UCSB College of Engineering from freshman to senior year. He shares some stories about the College in its early years.
David Vandervoet's student photo taken in the 60s
Jan 12, 2017
Jan 11, 2017
Campàs' research focuses on "decoding the mechanical control of tissue growth"
Jan 09, 2017
A Q&A with Professor John Bowers
Dec 21, 2016
TMP is accepting applications for its inaugural Fall 2017 doctoral class. Deadline for application is Jan. 15, 2017
Dec 15, 2016
The IEEE CSS honors Mostofi for “contributions to the fundamentals of communications and control co-optimization in mobile sensor networks”
Dec 13, 2016
Apeel Sciences, a start-up created by UCSB Materials alumnuns James Rogers, has developed a method to extend the life of produce as much as five times, which could transform the produce industry.
Dec 13, 2016
Professors Larry Coldren and James Speck honored by NAI for their “highly prolific spirit of innovation”
Dec 06, 2016
AlChE recognizes Fredrickson's impactful contributions in polymer theory and simulations
Dec 05, 2016
Scientists at UCSB develop a powerful new technique that reveals for the first time the mechanical environment that cells perceive in living tissues
Representatives from UCSB, Allan Hancock College, Ventura College, Santa Barbara City College and Oxnard College collaborate in a Regional Alliance to enhance their engineering curricula for ESTEEM scholars
Nov 28, 2016
NSF-funded program, ESTEEM, gives academically strong, low-income engineering undergraduates get the boost they need for academic success
Nov 21, 2016
Professors Kaustav Banerjee and Diyakant Agrawal have been elected to the American Association for the Advancement of Science (AAAS)
Schematic illustration of Shockley-Read-Hall (SRH) recombination due to iron in GaN. Iron is a deep acceptor with a defect level (black line) close to the GaN conduction band (green). The charge density corresponding to this localized level is illustrated in the middle of the figure. Conventional SRH recombination (left) would proceed via electron capture from the conduction band into the defect level, but the overall rate would be limited by slow capture of holes because the defect level is far from the valence band (blue). The presence of excited states enhances the hole capture rate (right) such that the overall SRH recombination process becomes very efficient.
Nov 04, 2016
UCSB researchers warn that trace amounts of transition metal impurities act as recombination centers in gallium nitride semiconductors
- 1 of 6
- next ›