AlChE recognizes Fredrickson's impactful contributions in polymer theory and simulations
Scientists at UCSB develop a powerful new technique that reveals for the first time the mechanical environment that cells perceive in living tissues
Representatives from UCSB, Allan Hancock College, Ventura College, Santa Barbara City College and Oxnard College collaborate in a Regional Alliance to enhance their engineering curricula for ESTEEM scholars
NSF-funded program, ESTEEM, gives academically strong, low-income engineering undergraduates get the boost they need for academic success
Professors Kaustav Banerjee and Diyakant Agrawal have been elected to the American Association for the Advancement of Science (AAAS)
Schematic illustration of Shockley-Read-Hall (SRH) recombination due to iron in GaN. Iron is a deep acceptor with a defect level (black line) close to the GaN conduction band (green). The charge density corresponding to this localized level is illustrated in the middle of the figure. Conventional SRH recombination (left) would proceed via electron capture from the conduction band into the defect level, but the overall rate would be limited by slow capture of holes because the defect level is far from the valence band (blue). The presence of excited states enhances the hole capture rate (right) such that the overall SRH recombination process becomes very efficient.
UCSB researchers warn that trace amounts of transition metal impurities act as recombination centers in gallium nitride semiconductors
$550K NSF grant helps Computer Science Professor Elizabeth Belding bring wireless technology to rural inland native communities