UCSB Engineering

Umesh Mishra

Professor, Department of Electrical and Computer Engineering

Electrical & Computer Engineering

Umesh Mishra

Contacts

Department of Electrical and Computer Engineering
UC Santa Barbara
Santa Babara, CA 93106

tel: (805) 893-3586
fax: (805) 893-3262
mishra@ece.ucsb.edu

Personal web site

Research Description

Electronics and Photonics: high-speed transistors, semiconductor device physics, quantum electronics, design and fabrication of millimeter-wave devices, novel integration techniques, Gallium Nitride based electronics, photonics and photovoltaics.

Biography

Professor Mishra is a recognized leader in the area of high-speed field effect transistors, and has made major contributions at every laboratory and academic institution for which he has worked, including: Hughes Research Laboratories in Malibu, California; the University of Michigan at Ann Arbor; and General Electric, Syracuse, New York. He is also a fellow of the IEEE, Member of the National Academy of Engineering as well as a recipient of both the IEEE David Sarnoff Award and the ISCS Quantum Device Award.

Selected Publications

  • 12W/mm Power Density AlGaN/GaN HEMTs on Sapphire Substrate”, Electronics Letters, Vol. 40, No. 1, 2004, A. Chini, D. Buttari, R. Coffie, S. Heikman, S. Keller, U. Mishra, web link
  • AlGaN/GaN Current Aperture Vertical Electron Transistors with Regrown Channels, Journal of Applied Physics, Vol. 95, No. 4, 2004, 2073-2078, I. Ben-Yaacov, Y Seck, U. Mishra, web link
  • AlGaN/GaN Polarization-Doped Field-Effect Transistor for Microwave Power Applications, Applied Physics Letters, Vol. 84, No. 9, 2004, 1591-1593, S. Rajan, H. Xing, D. Jena, S.P. DenBaars, and U.K. Mishra, web link
  • High-Power Polarization-Enigineered GaN/AlGaN/GaN HEMTs Without Surface Passivation, IEEE Electron Device Letters, Vol. 25, No. 1, 2004, 79, L. Shen, R. Coffie, D. Buttari, S. Heikman, A. Chakraborty, A. Chini, S. Keller, S.P. DenBaars, and U.K. Mishra, web link
  • Impact of Carbon on Trap States in n-type GaN by Metalorganic Chemical Vapor Deposition, Applied Physics Letters, Vol. 84, No. 3, 2004, 374-376, A. Armstrong, A. Arehart, B. Moran, S. DenBaars, U. Mishra, J. Speck, S. Ringel, web link
  • Integration of BaxSr1 – x TiO3 Thin Films With AlGaN/GaN HEMT Circuits, IEEE Electron Device Letters, Vol. 25, No. 2, 2004, 49-51, H. Xu, N. Pervez, P.J. Hansen, L. Shen, S. Keller, U.K. Mishra, and R.A. York, web link
  • Microstructural Evolution of a-plane GaN Grown on a-plane SiC by Metalorganic Chemical Vapor Deposition, Applied Physics Letters, Volume 84, No. 8, 2004, 1281-1283, M.D. Craven, F. Wu, A. Chakraborty, B. Imer, U.K. Mishra, S.P. DenBaars, and J.S. Speck, web link
  • Power and Linearity Characteristics of GaN MISFETs on Sapphire Substrate, IEEE Electron Device Letters, Vol. 25, No. 2, 2004, 55-57, A. Chini, J. Wittich, S. Heikman, S. Keller, S.P. DenBaars, and U.K. Mishra, web link
  • Radiative and Nonradiative Processes in Strain-Free AlxGa1-xN Films Studied by Time-Resolved Photoluminescence and Positron Annihilation Techniques, Journal of Applied Physics, Vol. 95, No. 5, 2004, 2495-2504, T. Onuma, S. Chichibu, A. Uedono, T. Sota, P. Cantu, T. Katona, J. Keading, S. Keller, U. Mishra, S. Nakamura, and S. DenBaars, web link
  • Wafer-fused n-AlGaAs/p-GaAs/n-GaN Heterojunction Bipolar Transistor with uid-GaAs Base-Collector Setback, Mat. Res. Soc. Symp. Proc. Vol 798 © 2004, Materials Research Society, 2004, Y10.20.1 – Y10.20.4, S. Estrada, J. Champlain, C. Wang, A. Stonas, L. Coldren, S. DenBaars, U.K. Mishra, E. Hu, web link