UCSB Engineering

Arthur Gossard

Research Professor & Professor Emeritus

Electrical & Computer Engineering

Arthur Gossard


Materials Department
University of California
Santa Barbara, CA 93106

tel: 805 893-2686
fax: 805 893-3262

Personal web site

This image shows the coherent flow of electrons through a quantum point contact formed in a two dimensional electron gas inside a GaAs/AlGaAs heterostructure. Scanned probe microscope images on the outside agree well with theoretical simulations inside. The fringes are spaced by half the electron wavelength.

Research Description

The broad scope of Nanoscience requires the strongly interactive vertical integration based on Nanoscale building blocks, giving rise to new device modalities, and ultimately producing new information technologies at the systems level. Equally important is the horizontal integration that embraces more traditional academic disciplines. Research at CNSI includes faculty, students and postdocs from 11 different Academic Departments.

CNSI promotes and facilitates the speedy and robust transfer of nanosystems innovation to the marketplace, and by marrying educational and research opportunities, CNSI produces broadly trained scientists and engineers capable of sustaining California's leadership in nanotechnology into the future. Work done at the CNSI links together nanostructures to produce behaviors and information that grow exponentially with system complexity. To produce and understand such complex nanosystems that incorporate biological and electronic nanostructures requires fundamentally new approaches to modeling, imaging, characterization, and data analysis.

Research Groups


Aurther Gossard is a Professor of Materials and Electrical & Computer Engineering at the University of California, Santa Barbara. He was formerly a Distinguished Member of the Technical Staff of AT&T Bell Laboratories. His special interests are molecular beam epitaxy, the growth of quantum wells, superlattices, magnetic semiconductors and metal/semiconductor nanocomposites and their applications to high performance electrical and optical devices and the physics of low-dimensional structures. He grew the first alternate monolayer artificial superlattices in semiconductors and the first modulation doped quantum wells. He was co-discoverer of the quantum confined Stark effect and the fractional quantization of the Hall effect.


  • United States National Academy of Engineering
  • Electron Devices Society Fellow


  • The American Association for the Advancement of Science (AAAS) Newcomb Cleveland Prize, 2006
  • The AAAS Newcomb Cleveland Prize, 2005
  • James C. McGroddy Prize for New Materials from American Physical Society, 2001
  • National Academy of Sciences Member, 2001

Selected Publications

  • Cross-plane lattice and electronic thermal conductivities of ErAs:InGaAs/InGaAlAs superlattices, Appl. Phys.Lett. 88, 2006, Kim, W., Singer, S., Majumdar, A., Vashaee, D., Zhixi, B., Shakouri, A., Zeng, G., Bowers, J. E., Zide, J. M. O., and Gossard, A. C.
  • Demonstration of electron filtering to increase the Seebeck coefficient in ErAs:InGaAs/InGaAlAs superlattices, Physical Review B, 2006, J. M. O. Zide, D. Vashaee, G. Zeng, J. E. Bowers, A. Shakouri, A. C. Gossard
  • Thermal conductivity reduction and thermoelectric figure of merit increase by embedding nanoparticles in crystalline semiconductors, Phys. Rev. Lett. 96, 2006, Kim, W., Zide, J., Gossard, A., Klenov, D., Stemmer, S., Shakouri, A., and Majumdar, A.
  • Advanced Epitaxy for Future Electronics, Optics, and Quantum Physics, 2000, 11 pages, Arthur C. Gossard
  • ErAs:InGaAs/InGaAlAs superlattice thin-film power generator array, Applied Physics Letters, G. Zeng, J. E. Bowers, J. M. O. Zide, A. C. Gossard, W. Kim, S. Singer, A. Majumdar, R. Singh, Z. Bian, Y. Zhang, and A. Shakouri