Electrical & Computer Engineering
Electrical and Computer Engineering Department
Harold Frank Hall, Rm 5153
Santa Barbara, CA 93106-9560
Personal web site
In general our group is broadly interested in physical implementation of computation, including device physics, circuit design, and high-level architecture, with emphasis on emerging device technologies. In particular, the main focus is on "CMOL" (standing for Cmos + MOLecular-scale devices) variety of hybrid nanoelectronic circuits. The basic idea of such circuits is to combine the advantages of the CMOS technology including its flexibility and high fabrication yield with those of ultra dense stackable crosspoint devices, e.g. those based on resistive switching phenomena. The nanoscale devices are naturally incorporated into the crossbar fabric enabling very high functional density at acceptable fabrication cost. Detailed simulation results have shown that CMOL circuits not only can provide orders of magnitude improvements in density of digital memories and reconfigurable logic circuits over conventional end-of-the-roadmap counterparts, but also for the first time enable implementation of large scale neuromorphic networks for advanced information processing. Currently our group is working towards experimental demonstration of CMOL circuits.
Prior to joining UCSB Dmitri Strukov worked as a postdoctoral associate, first at Stony Brook University 2006-2007, and then at Hewlett Packard Laboratories 2007-2009 on various aspects of reconfigurable nanoelectronic systems, including resistive switching (\"memristive\") device modeling, circuit architectures, and design automation tools, for applications in digital memories, programmable logic, and in neuromorphic networks. He received a MS in applied physics and mathematics from the Moscow Institute of Physics and Technology in 1999 and a PhD in electrical engineering from Stony Brook University in New York in 2006.
- “The switching location of a bipolar memristor: Chemical, thermal, and structural mapping, Nanotechnology, vol. 22, 2011, 254015, J.P. Strachan, D.B. Strukov, J. Borghetti, J.J. Yang, G. Medeiros-Ribeiro, and R.S. Williams
- Coupled ionic and electronic transport model of thin-film semiconductor memristive behavior, Small, vol. 5, 2009, 1058, D. B. Strukov, J. L. Borghetti, and R. S. Williams
- Electrical transport and thermometry of electroformed titanium dioxide memristive switches, Journal of Applied Physics, vol. 106, 2009, 124504, J. Borghetti, D. B. Strukov, M. Pickett, J. Yang, and R. S. Williams
- Memristor-CMOS hybrid integrated circuits for configurable logic, Nano Letters, vol. 9, 2009, 3640-3645, Q. Xia, W. Robinett, M. Cumbie, N. Banerjee, T. Cardinali, J.Yang, W. Wu, X. Li, W. Tong, G. Snider, D. B. Strukov, G. Medeiros-Ribeiro and R. S. Williams
- Switching dynamics in a titanium dioxide memristive device, Journal of Applied Physics, vol. 106, 2009, 074508, M. Pickett, D. B. Strukov, J. Borghetti, J. Yang, G. Snider, D. Stewart, and R. S. Williams
- Topological framework for three-dimensional circuits with multilayer crossbar arrays, Proceedings of the National Academy of Sciences, vol. 106, 2009, 20155-20158, D. B. Strukov and R. S. Williams
- The missing memristor found, Nature, vol. 453, 2008, 80, D. B. Strukov, G. Snider, D. R. Stewart, and R. S. Williams
- Defect-tolerant architectures for nanoelectronic crossbar memories, Journal of Nanoscience and Nanotechnology, vol.7, 2007, 151, D. B. Strukov and K. K. Likharev
- Hybrid CMOS/nanodevice circuits for digital signal processing, IEEE Transactions on Nanotechnology, vol. 6, 2007, 696, D. B. Strukov and K. K. Likharev